ROHM · FETs & Power MOSFETs · MPN R8008ANJGTL
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 38nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 1.03Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
800V 8A 5V 195W 1.03Ω@10V 1 N-channel TO-263S Single FETs, MOSFETs RoHS