ROHM · FETs & Power MOSFETs · MPN R8002ANX
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 12.7nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 4.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
800V 2A 5V 35W 4.3Ω@10V 1 N-channel TO-220FM Single FETs, MOSFETs RoHS