ROHM · FETs & Power MOSFETs · MPN R6535ENZC17
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 102W |
| RDS(on) | 115mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
650V 35A 4V 102W 115mΩ@10V 1 N-channel TO-3PF Single FETs, MOSFETs RoHS