ROHM · FETs & Power MOSFETs · MPN R6535ENZ4C13
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 379W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 115mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
650V 35A 4V 379W 115mΩ@10V 1 N-channel TO-247G Single FETs, MOSFETs RoHS