ROHM R6530KNZ4C13

ROHM · FETs & Power MOSFETs · MPN R6530KNZ4C13

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation305W
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF

Technical details

650V 30A 5V 305W 140mΩ@10V 1 N-channel TO-247G Single FETs, MOSFETs RoHS

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