ROHM R6530KNX3C16

ROHM · FETs & Power MOSFETs · MPN R6530KNX3C16

No reviews yet — be the first to review ROHM R6530KNX3C16.

Specifications

Output Capacitance(Coss)2.2nF
Pd - Power Dissipation307W
Configuration-
Drain to Source Voltage650V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF

Technical details

307W 650V 30A 5V 140mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs