ROHM · FETs & Power MOSFETs · MPN R6520ENZ4C13
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 231W |
| RDS(on) | 205mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
650V 20A 4V 231W 205mΩ@10V 1 N-channel TO-247G Single FETs, MOSFETs RoHS