ROHM R6520ENJTL

ROHM · FETs & Power MOSFETs · MPN R6520ENJTL

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation231W
RDS(on)205mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF

Technical details

650V 20A 4V 231W 205mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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