ROHM · FETs & Power MOSFETs · MPN R6511ENXC7G
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 53W |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
650V 11A 4V 53W 400mΩ@10V 1 N-channel TO-220FM Single FETs, MOSFETs RoHS