ROHM · FETs & Power MOSFETs · MPN R6509ENXC7G
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 48W |
| RDS(on) | 585mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 430pF |
650V 9A 4V 48W 585mΩ@10V 1 N-channel TO-220FM Single FETs, MOSFETs RoHS