ROHM · FETs & Power MOSFETs · MPN R6504ENJTL
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| Output Capacitance(Coss) | 320pF |
|---|---|
| Pd - Power Dissipation | 58W |
| Configuration | - |
| Gate Charge(Qg) | 15nC@10V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 1.05Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
58W 650V 4A 4V 1.05Ω@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS