ROHM · FETs & Power MOSFETs · MPN R6035ENZ1C9
No reviews yet — be the first to review ROHM R6035ENZ1C9.
| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 2nF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 102mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.72nF |
600V 35A 4V 120W 102mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS