ROHM R6011ENX

ROHM · FETs & Power MOSFETs · MPN R6011ENX

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)570pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)390mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF

Technical details

N-Channel 600V 11A 53W Through Hole TO-220FM

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