ROHM · FETs & Power MOSFETs · MPN R6000ENHTB1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 4.3nC@10V |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 8.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 45pF |
600V 500mA 5V 2W 8.8Ω@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS