ROHM R5011FNX

ROHM · FETs & Power MOSFETs · MPN R5011FNX

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)11A;5.4A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

500V 4V 50W 520mΩ@10V 1 N-channel TO-220FM Single FETs, MOSFETs RoHS

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