ROHM QS8M51TR

ROHM · FETs & Power MOSFETs · MPN QS8M51TR

No reviews yet — be the first to review ROHM QS8M51TR.

Specifications

Current - Continuous Drain(Id)2A;1.5A
Pd - Power Dissipation1.5W
RDS(on)325mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)290pF;950pF
Gate Charge(Qg)4.7nC@5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 100V 2A 1.5A 1.5W Surface Mount TSMT8

Related FETs & Power MOSFETs