ROHM QS8M13TCR

ROHM · FETs & Power MOSFETs · MPN QS8M13TCR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5.5nC@15V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)25mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)390pF
TypeN-Channel + P-Channel

Technical details

30V 6A 1V 1.5W 25mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TSMT-8 Single FETs, MOSFETs RoHS

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