ROHM · FETs & Power MOSFETs · MPN QS8M12TCR
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 8.4nC@5V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 84mΩ@4V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 800pF |
| Type | N-Channel + P-Channel |
30V 4A 2.5V 1.5W 84mΩ@4V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TSMT8 Single FETs, MOSFETs RoHS