ROHM QS8K11TCR

ROHM · FETs & Power MOSFETs · MPN QS8K11TCR

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Specifications

Current - Continuous Drain(Id)3.5A
RDS(on)50mΩ@10V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Number2 N-Channel
Input Capacitance(Ciss)180pF
Gate Charge(Qg)3.3nC@5V
Operating Temperature-

Technical details

3.5A 50mΩ@10V 1.5W 2.5V 2 N-Channel TSMT8 FET, MOSFET Arrays RoHS

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