ROHM QS8J4TR

ROHM · FETs & Power MOSFETs · MPN QS8J4TR

No reviews yet — be the first to review ROHM QS8J4TR.

Specifications

Current - Continuous Drain(Id)4A
RDS(on)56mΩ@4.5V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)110pF
Number2 P-Channel
Input Capacitance(Ciss)800pF
Gate Charge(Qg)8.4nC@15V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 4A 1.5W Surface Mount TSMT8

Related FETs & Power MOSFETs