ROHM QS8J2TR

ROHM · FETs & Power MOSFETs · MPN QS8J2TR

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Specifications

Current - Continuous Drain(Id)4A
Pd - Power Dissipation550mW
RDS(on)36mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
Number2 P-Channel
Input Capacitance(Ciss)1.94nF
Gate Charge(Qg)20nC@4.5V
Operating Temperature-

Technical details

P-Channel 12V 4A 550mW Surface Mount TSMT-8

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