ROHM QS8F2TCR

ROHM · FETs & Power MOSFETs · MPN QS8F2TCR

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)13nC@5V
Current - Continuous Drain(Id)2.5A
Output Capacitance(Coss)130pF
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)61mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.35nF
TypeP-Channel

Technical details

12V 2.5A 1V 1.5W 61mΩ@4.5V 1 P-Channel P-Channel TSMT8 Single FETs, MOSFETs RoHS

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