ROHM · FETs & Power MOSFETs · MPN QS6M4TR
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| Current - Continuous Drain(Id) | 1.5A |
|---|---|
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 170mΩ@4V |
| Gate Threshold Voltage (Vgs(th)) | 500mV;700mV |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 80pF;270pF |
| Gate Charge(Qg) | 1.6nC@15V;3nC@15V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 30V 1.5A 1.25W Surface Mount SOT-23-6