ROHM QH8MB5TCR

ROHM · FETs & Power MOSFETs · MPN QH8MB5TCR

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Specifications

Current - Continuous Drain(Id)4.5A;5A
Pd - Power Dissipation1.1W
RDS(on)44mΩ@10V;41mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)150pF;920pF
Gate Charge(Qg)3.5nC@10V;17.2nC@10V
Operating Temperature-

Technical details

N-Channel+P-Channel Array 40V 4.5A 5A 1.1W Surface Mount TSMT-8

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