ROHM QH8MA4TCR

ROHM · FETs & Power MOSFETs · MPN QH8MA4TCR

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Specifications

Current - Continuous Drain(Id)9A
RDS(on)28.6mΩ@10V
Pd - Power Dissipation2.6W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)125pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)890pF
Gate Charge(Qg)19.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)160pF

Technical details

N-Channel+P-Channel Array 30V 9A 2.6W Surface Mount TSMT-8

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