ROHM QH8MA3TCR

ROHM · FETs & Power MOSFETs · MPN QH8MA3TCR

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Specifications

Current - Continuous Drain(Id)7A
RDS(on)29mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)300pF
Gate Charge(Qg)7.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 30V 7A 2.5W Surface Mount TSMT8

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