ROHM · FETs & Power MOSFETs · MPN QH8M22TCR
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| Current - Continuous Drain(Id) | 4.5A;2A |
|---|---|
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 46mΩ@10V;190mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V;3V |
| Drain to Source Voltage | 40V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 193pF;450pF |
| Gate Charge(Qg) | 2.6nC@10V;9.5nC@10V |
| Operating Temperature | - |
1.1W 1 N-Channel + 1 P-Channel TSMT-8 FET, MOSFET Arrays RoHS