ROHM QH8KC6TCR

ROHM · FETs & Power MOSFETs · MPN QH8KC6TCR

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Specifications

Current - Continuous Drain(Id)5.5A
Pd - Power Dissipation1.5W
RDS(on)23mΩ@10V;44mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number2 N-Channel
Input Capacitance(Ciss)460pF
Gate Charge(Qg)7.6nC@10V
Operating Temperature-
Output Capacitance(Coss)180pF

Technical details

N-Channel Array 60V 5.5A 1.5W Surface Mount TSMT-8

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