ROHM QH8KB6TCR

ROHM · FETs & Power MOSFETs · MPN QH8KB6TCR

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Specifications

Current - Continuous Drain(Id)8A
Pd - Power Dissipation1.1W
RDS(on)17.7mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)530pF
Gate Charge(Qg)10.6nC@10V
Operating Temperature-

Technical details

N-Channel Array 40V 8A 1.1W Surface Mount TSMT-8

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