ROHM · FETs & Power MOSFETs · MPN QH8JB5TCR
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| Current - Continuous Drain(Id) | 5A |
|---|---|
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 41mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 920pF |
| Gate Charge(Qg) | 17.2nC@10V |
| Operating Temperature | - |
5A 1.1W 41mΩ@10V 2.5V 2 P-Channel TSMT-8 FET, MOSFET Arrays RoHS