ROHM IMZ4T108

ROHM · Transistors (BJTs) · MPN IMZ4T108

No reviews yet — be the first to review ROHM IMZ4T108.

Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Collector - Emitter Voltage VCEO32V
Pd - Power Dissipation300mW
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))600mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 32V 500mA 250MHz 300mW Surface Mount SOT-457

Related Transistors (BJTs)