ROHM IMX9T110

ROHM · Transistors (BJTs) · MPN IMX9T110

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Specifications

Current - Collector Cutoff500nA
DC Current Gain560
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO12V
Transition frequency(fT)350MHz
Vce Saturation(VCE(sat))400mV
typeNPN
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Surface Mount SC-74

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