ROHM IMX4T108

ROHM · Transistors (BJTs) · MPN IMX4T108

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Specifications

Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO20V
Pd - Power Dissipation300mW
DC Current Gain56
Transition frequency(fT)1.5GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-

Technical details

20V 300mW 56 NPN 50mA SC-74(SOT-457) Bipolar Transistor Arrays RoHS

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