ROHM IMX1T108

ROHM · Transistors (BJTs) · MPN IMX1T108

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation300mW
DC Current Gain120
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))400mV
typeNPN
Number2 NPN
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

50V 300mW 120 NPN 150mA SC-74(SOT-457) Bipolar Transistor Arrays RoHS

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