ROHM IMT1AT110

ROHM · Transistors (BJTs) · MPN IMT1AT110

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))500mV
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 300mW Surface Mount SOT-457

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