ROHM IMH1AT110

ROHM · Transistors (BJTs) · MPN IMH1AT110

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Specifications

Transition frequency(fT)250MHz
DC Current Gain56
typeNPN
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor22kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,0.2V
Voltage - Input(Max)(VI(off))3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457

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