ROHM IMD8AT108

ROHM · Transistors (BJTs) · MPN IMD8AT108

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Specifications

Current - Collector Cutoff0.5uA
Emitter-Base Voltage VEBO50V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Input Resistor61.1kΩ
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

100 1 NPN, 1 PNP Pre-Biased 300mW 100mA 50V SC-74(SOT-457) Bipolar Transistor Arrays, Pre-Biased RoHS

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