ROHM IMB10AT110

ROHM · Transistors (BJTs) · MPN IMB10AT110

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Output Voltage(VO(on))300mV@5mA,250uA
typePNP
Input Resistor2.86kΩ
Resistor Ratio26
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

80 2 PNP Pre-Biased Transistors 300mW 100mA 50V SC-74(SOT-457) Bipolar Transistor Arrays, Pre-Biased RoHS

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