ROHM · FETs & Power MOSFETs · MPN HS8K1TB
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| Current - Continuous Drain(Id) | 10A |
|---|---|
| RDS(on) | 14.6mΩ@10V;11.8mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 348pF;429pF |
| Gate Charge(Qg) | 6nC@10V;7.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 10A 2W Surface Mount UDFN-8-EP