ROHM · FETs & Power MOSFETs · MPN HS8K11TB
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| Current - Continuous Drain(Id) | 7A;11A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 17.9mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 500pF |
| Gate Charge(Qg) | 11.1nC@10V |
| Operating Temperature | - |
2W 17.9mΩ@10V 2.5V 2 N-Channel UDFN-8-EP FET, MOSFET Arrays RoHS