ROHM · FETs & Power MOSFETs · MPN HP8ME5TB1
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| Current - Continuous Drain(Id) | 8.5A;8A |
|---|---|
| Pd - Power Dissipation | 20W |
| RDS(on) | 148mΩ@10V;210mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 100V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF;34pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 90pF;590pF |
| Gate Charge(Qg) | 2.9nC@10V;19.7nC@10V |
| Output Capacitance(Coss) | 25pF;37pF |
20W 1V 1 N-Channel + 1 P-Channel HSOP-8 FET, MOSFET Arrays RoHS