ROHM · FETs & Power MOSFETs · MPN HP8MA2TB1
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| Current - Continuous Drain(Id) | 18A;15A |
|---|---|
| Pd - Power Dissipation | 3W |
| RDS(on) | 7.5mΩ@10V;13.2mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF;170pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF;1.25nF |
| Gate Charge(Qg) | 22nC@10V;25nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 130pF;220pF |
N-Channel+P-Channel 30V 18A 3W Surface Mount HSOP-8