ROHM HP8MA2TB1

ROHM · FETs & Power MOSFETs · MPN HP8MA2TB1

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Specifications

Current - Continuous Drain(Id)18A;15A
Pd - Power Dissipation3W
RDS(on)7.5mΩ@10V;13.2mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)105pF;170pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.1nF;1.25nF
Gate Charge(Qg)22nC@10V;25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)130pF;220pF

Technical details

N-Channel+P-Channel 30V 18A 3W Surface Mount HSOP-8

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