ROHM · FETs & Power MOSFETs · MPN HP8M51TB1
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| Pd - Power Dissipation | 3W |
| RDS(on) | 170mΩ@10V;290mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 600pF;1.43nF |
| Gate Charge(Qg) | 15nC@10V;26.2nC@10V |
| Operating Temperature | - |
4.5A 3W 2.5V 1 N-Channel + 1 P-Channel HSOP-8 FET, MOSFET Arrays RoHS