ROHM HP8M31TB1

ROHM · FETs & Power MOSFETs · MPN HP8M31TB1

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Specifications

Current - Continuous Drain(Id)8.5A
RDS(on)65mΩ@10V;70mΩ@10V
Pd - Power Dissipation3W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)470pF;2.3nF
Gate Charge(Qg)12.3nC@10V;38nC@10V
Operating Temperature-

Technical details

8.5A 3W 3V 1 N-Channel + 1 P-Channel HSOP-8 FET, MOSFET Arrays RoHS

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