ROHM EMZ7T2R

ROHM · Transistors (BJTs) · MPN EMZ7T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO12V
DC Current Gain270
Emitter-Base Voltage VEBO6V
Transition frequency(fT)320MHz
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 12V 500mA 320MHz 150mW Surface Mount SOT-563(SOT-666)

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