ROHM EMY1T2R

ROHM · Transistors (BJTs) · MPN EMY1T2R

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

300mW 50V 120 NPN+PNP 150mA SMD-5P Bipolar Transistor Arrays RoHS

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