ROHM EMT1T2R

ROHM · Transistors (BJTs) · MPN EMT1T2R

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))500mV
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 150mW Surface Mount SOT-563(SOT-666)

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