ROHM EMH60T2R

ROHM · Transistors (BJTs) · MPN EMH60T2R

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Specifications

DC Current Gain80
Output Voltage(VO(on))150mV@5mA,0.5mA
Input Resistor2.2kΩ
Resistor Ratio21
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V
Voltage - Input(Max)(VI(off))500mV@0.1mA,5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-563

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