ROHM EMG8T2R

ROHM · Transistors (BJTs) · MPN EMG8T2R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
typeNPN
Output Voltage(VO(on))300mV
Input Resistor6.11kΩ
Resistor Ratio12
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.3V
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SMD-5P

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