ROHM EMG2T2R

ROHM · Transistors (BJTs) · MPN EMG2T2R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain68
Output Voltage(VO(on))300mV@10mA,500uA
typeNPN
Input Resistor47kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

68 2 NPN (Pre-Biased) 150mW 100mA 50V EMT-5 Bipolar Transistor Arrays, Pre-Biased RoHS

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